About the Journal :
Experimental and Theoretical NANOTECHNOLOGY (ETN) abbreviated as Exp. Theo. NANOTECHNOLOGY is a multidisciplinary peer-reviewed international journal published three issues a year. It includes specialized research papers, short communications, reviews and selected conference papers in special issues on the characterization, synthesis, processing, structure and properties of different principles and applications of NANOTECHNOLOGY; with focus on advantageous achievements and applications for the specialists in engineering, chemistry, physics and materials science.
ETN covers and publishes all aspects of fundamental and applied researches of experimental and theoretical nanoscale technology dealing with materials synthesis, processing, nanofabrication, nanoprobes, spectroscopy, properties, biological systems, nanostructures, nanoelectronics, nano-optics, nano-mechanics, nanodevices, nanobiotechnology, nanomedicine, nanotoxicology within the scope of the journal. ETN aims to acquire the recent and outstanding researches for the benefit of the human being.
Analytical Modeling and Simulation of Advanced Silicon Nanowire Transistors
Surrounding gate architecture for transistors has been shown to alleviate many of the problems posted by scaling and short channel effects. Semiconducting nanowires have recently attracted considerable attention in the semiconductor industry. With their unique electrical and optical properties, they offer interesting perspectives for basic research as well as for technology. In this paper, we have proposed a new analytical model for three different geometries of Surrounding Gate Silicon Nanowire Transistors. I–V characteristics (current-voltage) of the devices are effectively derived in all the three regions of operation. The variation of threshold voltage and drain current due to the device parameters like silicon thickness, doping concentration and radius are also predicted. Effectiveness of the models are fully validated by comparing the analytical results with the TCAD simulation results.