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Experimental and Theoretical NANOTECHNOLOGY

About the Journal :

Experimental and Theoretical NANOTECHNOLOGY (ETN) is a multidisciplinary peer-reviewed international journal published four issues a year. It includes specialized research papers, short communications, reviews and selected conference papers in special issues on the characterization, synthesis, processing, structure and properties of different principles and applications of NANOTECHNOLOGY; with focus on advantageous achievements and applications for the specialists in engineering, chemistry, physics and materials science.

ETN covers and publishes all aspects of fundamental and applied researches of experimental and theoretical nanoscale technology dealing with materials synthesis, processing, nanofabrication, nanoprobes, spectroscopy, properties, biological systems, nanostructures, nanoelectronics, nano-optics, nano-mechanics, nanodevices, nanobiotechnology, nanomedicine, nanotoxicology within the scope of the journal. ETN aims to acquire the recent and outstanding researches for the benefit of the human being.



CORRELATION BETWEEN CRYSTAL DEFECTS AND BAND GAP OF ZNO NANOBELTS

We report here investigations of crystal and electronic structure of as-synthesized and annealed ZnO nanobelts by an in-situ high-resolution transmission elec- tron microscope equipped with a scanning tunneling mi- croscopy probe. The in-situ band gap measurements of indi- vidual ZnO nanobelts were carried out in scanning tunnel- ing spectroscopy mode using the differential conductance dI /dV –V data. The band gap value of the as-synthesized ZnO nanobelts was calculated to be ∼2.98 eV, while this property for the annealed nanobelts (∼3.21 eV) was close to the band gap value for bulk ZnO materials (∼3.37 eV). The difference in the band gap value of the as-synthesized ZnO nanobelts and annealed ones was attributed to the pla- nar defects (e.g. stacking faults and twins). These defects can alter the electronic structure by producing localized res- onant states that result in band gap reduction.