About the Journal :
Gallium nitride (GaN) nanocrystalline (NC) thin films (TH) were deposited on different surfaces of material as substrates; quartz, glass as well as fluorine-doped tin oxide (FTO) using radio frequency (RF) reactive magnetron sputtering method. The effects of substrate type on structural and morphological properties of GaN-NCTH were studied. X-ray diffraction analyses and field-emission scanning electron microscopy (FESEM) images showed that the GaN particles have covered all surfaces of the substrates with a smooth arrangement. The root mean square (RMS) surface roughness was 30.8, 1.45 and 1.46 nm for the GaN-NCTH deposited on FTO, glass and quartz substrates, respectively. Based on the GaN-NCTH prepared onto glass substrate, the optical bandgap was calculated to be 3.38 eV.
Keywords: GaN nanocrystalline; RF sputtering; thin film; Epitaxial growth.