About the Journal :
Experimental and Theoretical NANOTECHNOLOGY (ETN) is a multidisciplinary peer-reviewed international journal published three issues a year. It includes specialized research papers, short communications, reviews and selected conference papers in special issues on the characterization, synthesis, processing, structure and properties of different principles and applications of NANOTECHNOLOGY; with focus on advantageous achievements and applications for the specialists in engineering, chemistry, physics and materials science.
ETN covers and publishes all aspects of fundamental and applied researches of experimental and theoretical nanoscale technology dealing with materials synthesis, processing, nanofabrication, nanoprobes, spectroscopy, properties, biological systems, nanostructures, nanoelectronics, nano-optics, nano-mechanics, nanodevices, nanobiotechnology, nanomedicine, nanotoxicology within the scope of the journal. ETN aims to acquire the recent and outstanding researches for the benefit of the human being.
Gallium nitride (GaN) nanocrystalline (NC) thin films (TH) were deposited on different surfaces of material as substrates; quartz, glass as well as fluorine-doped tin oxide (FTO) using radio frequency (RF) reactive magnetron sputtering method. The effects of substrate type on structural and morphological properties of GaN-NCTH were studied. X-ray diffraction analyses and field-emission scanning electron microscopy (FESEM) images showed that the GaN particles have covered all surfaces of the substrates with a smooth arrangement. The root mean square (RMS) surface roughness was 30.8, 1.45 and 1.46 nm for the GaN-NCTH deposited on FTO, glass and quartz substrates, respectively. Based on the GaN-NCTH prepared onto glass substrate, the optical bandgap was calculated to be 3.38 eV.
Keywords: GaN nanocrystalline; RF sputtering; thin film; Epitaxial growth.