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Experimental and Theoretical NANOTECHNOLOGY

About the Journal :

Experimental and Theoretical NANOTECHNOLOGY (ETN) is a multidisciplinary peer-reviewed international journal published four issues a year. It includes specialized research papers, short communications, reviews and selected conference papers in special issues on the characterization, synthesis, processing, structure and properties of different principles and applications of NANOTECHNOLOGY; with focus on advantageous achievements and applications for the specialists in engineering, chemistry, physics and materials science.

ETN covers and publishes all aspects of fundamental and applied researches of experimental and theoretical nanoscale technology dealing with materials synthesis, processing, nanofabrication, nanoprobes, spectroscopy, properties, biological systems, nanostructures, nanoelectronics, nano-optics, nano-mechanics, nanodevices, nanobiotechnology, nanomedicine, nanotoxicology within the scope of the journal. ETN aims to acquire the recent and outstanding researches for the benefit of the human being.



THE INFLUENCE OF RF POWER, PRESSURE AND SUBSTRATE TEMPERATURE ON THE ENERGY GAP TO VANADIUM OXIDE AT TALLNESS WAVE STIR 290 NM OF RF SPUTTERED

In this work, the (V2O5) films were deposited on glass substrates which produce by using "radio frequency (RF)"power supply and Argon gas technique and the nano-thin film deposition is obtained from a V2O5 target (5 mm in diameter and 5mm thickness) by the gradual variation of sputtering power 150 Watt and variation pressure (0.03 ,o.o5 and 0.007) Torr. The Energy Gap were investigated by, UV spectroscopy at "radio frequency" (RF) power ranging from 150 Watt and and substrate temperature (359, 373,473 and 573 K) and gas pressure  (0.03, 0.05 and  0.007 Torr ).The Energy Gap of the Vanadium Oxide thin film deposited by RF magnetron sputtering were analysis by UV-Visible spectroscopy shows that the average transmittance of all films in the range 40-65 %. When the thickness has been increased the transhumance was decreased from (65-40)%. The values of energy gap were decreased from (3.02-2.7 eV)  with the increase of thickness the films in relation to an increase in power, The energy gap decreased (2.8 - 2.7) eV with an increase in the substrate temperature respectively and the pressure.   

 

Keywords: V2O5; Energy gap; Thin films; RF Sputtering.