About the Journal :
Experimental and Theoretical NANOTECHNOLOGY (ETN) is a multidisciplinary peer-reviewed international journal published four issues a year. It includes specialized research papers, short communications, reviews and selected conference papers in special issues on the characterization, synthesis, processing, structure and properties of different principles and applications of NANOTECHNOLOGY; with focus on advantageous achievements and applications for the specialists in engineering, chemistry, physics and materials science.
ETN covers and publishes all aspects of fundamental and applied researches of experimental and theoretical nanoscale technology dealing with materials synthesis, processing, nanofabrication, nanoprobes, spectroscopy, properties, biological systems, nanostructures, nanoelectronics, nano-optics, nano-mechanics, nanodevices, nanobiotechnology, nanomedicine, nanotoxicology within the scope of the journal. ETN aims to acquire the recent and outstanding researches for the benefit of the human being.
Well-crystallized ZnO nanowire arrays were grown on GaN/sapphire by one-step chemical vapor deposition under control of the fabrication pressure of 1000– 2500 Pa and the best-aligned arrays were obtained at 1000 Pa. A photoluminescence study shows a red shift with nanowire diameter increase. Under 365-nm UV irradiation of 0.3 mW/cm2, the photoresponse study of the best ZnOar- rays shows an ultra-fast tri-exponential rise with three constants of 0.148, 0.064 and 0.613 s, and a bi-exponential de- cay behavior with two recovery constants of 30 and 270 ms. The ZnO/GaN heterojunction barriers could be responsible for the ultra-fast tri-exponential rise and bi-exponential de- cay behavior.
Keywords:ZnO; Array; UV.